InAs ( Indium Arsenide)
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InAs- Main Properties

‰ž—p

Hall element, Magneto resistive element

ƒNƒ‰ƒX/ Œ‹»\‘¢

Zinc blende (Cubic)

ˆç¬•û–@

LEC

ŠiŽq’萔Að

a=6.0585

¬’·•ûˆÊ

<100>

ƒoƒ“ƒhƒMƒƒƒbƒv,Eg(eV)

0.36i’¼Ú‘JˆÚŒ^j

—Z“_,Ž

942

Typical Properties:

Dopant

Size

Type

Concentration
icm-3j

Mobility (cm2/V.s)

EPD (cm-2)

Undoped InAs

50mm

N

’ 3L1016

?2L104

<3L104

Sn-InAs

50mm

N

(5-60) L1017

>2000

<3L104

S-InAs

50mm

N

(3-80)L1017

>2000

<3L104

Zn -InAs

50mm

P

(1-80) L1017

60-300

<3L104

Mn -InAs

50mm

P

(5-60) L1017

60-300

<3L104

Standard Size:

•\–ÊŽdã‚°

EOptical Polishing
EEpi-ready polishing
E As-cut

–Ê•ûˆÊ

<100> } 0.25‹

Žåƒtƒ‰ƒbƒg(OF)

16+/-2 mm (2 inch)

•›ƒtƒ‰ƒbƒg(IF)

8+/-2 mm (2 inch)

Œú‚Ý

350}25ƒÊm / 420}25ƒÊm


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