DC広帯域増幅器    モデルDC1000H20G25 (1GHz, 20dBm)
ELECTRONICS CHARACTERISTICS

Item
Symbol
Min.
Typ.
Max.
Unit
Voltage Gain (Rs/Ri=50Ω)
Avs
23.5
25
26.5
dB
Bandwidth Low      [1]
Bw1
 
0
 
Hz
{-3.01dB}High end
Bw2    
1
1.1
 
GHz
Gain Flatness      ±
Avf
 
1.1
1.75
dB
Rise/Fall time   (tr=tf)
tr,tf
 
330
 
ps
Overshoot     Standard
%Os
6.1
7
9.9
Persent
              Option”P1”
3.7
5.5
1dB Gain Compression
P1dB
18
20
 
dBm
3rd Order Intercept Point
P3im
 
31
 
dBm
Noise Figure
NF
 
5.5
7
dB
VSWR   in/out      [9]
VSWR
 
1.6
2
-
Input offset {DC only} [6]
Vio
 
3
 
mVdc
Temp.Coefficient    DC
Tc
 
180
 
ΜV/℃
                    AC
Tc:Avs
 
 
 
dB/℃
Temperature Range
Top
-25
 
75
Maximum Input Signal ±
Vmax
-
1
-
±Vdc
Supply Voltage    Pos.#1
0
17.7
18.5
19.3
Vdc
                  Pos.#2
0
 
 
 
                  Peg.#1
0
-17.7
-18.5
-19.3
                  Peg.#2
0
-10
-14.8
-19.5
Supply Current    Pos.#1
+|1
300
350
400
mAdc
                  Pos.#2
+|2
 
 
 
                  Neg.#1
-|1
-20
-40
-60
                  Neg.#2
-|2
-300
-350
-400
[1] AC only! To specify low end cutoff see table(1). To extended low end see option table.      
[6] All measurements are at 25℃ unless otherwise stated.     
[9] Individual test reports are available for all four ‘S’ parameters by ordering option ”R1”.


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